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BD6583MUV-A
Datasheet
● The coil selection
The DC/DC is designed by more than 4.7μH. When L value sets to a lower value, it is possibility that the specific
sub-harmonic oscillation of current mode DC / DC will be happened.
Please do not let L value to 3.3μH or below.
And, L value increases, the phase margin of DC / DC becomes to zero. Please enlarge the output capacitor value when you
increase L value.
Example)
4.7μH = output capacitor 2.2μF/50V 1pcs
6.8μH = output capacitor 2.2μF/50V 2pcs
10μH = output capacitor 2.2μF/50V 3pcs
This value is just examples, please made sure the final judgment is under an enough evaluation.
● Layout
In order to make the most of the performance of this IC, its layout pattern is very important. Characteristics such as
efficiency and ripple and the likes change greatly with layout patterns, which please note carefully.
to Power Supply
C IN
L
C BAT
PWM
Reset
C REG
to Cathode
of LED
SBD
Tr
VDET
N.C.
GND
LED6
LED5
LED4
C OUT
L ED 6
LE D5
L ED 4
LE D3
LED 2
to Anode
SW
GND
of each LED
R SENSE
SENSP
TEST
LED3
LED2
to GND
RISET
Figure 45. Layout
Connect the input bypath capacitor CIN(10μF) nearest to coil L, as shown in the upper diagram.
Wire the power supply line by the low resistance from CIN to VBAT pin. Thereby, the input voltage ripple of the IC can be
reduced. Connect smoothing capacitor CREG of the regulator nearest to between VREG and GND pin, as shown in the upper
diagram. Connect schottky barrier diode SBD of the regulator nearest to between coil L and switching transistor Tr.
And connect output capacitor COUT nearest to between CIN and GND pin. Thereby, the output voltage ripple of the IC can
be reduced.
Connect switching transistor Tr nearest to SW pin. Wire coil L and switching transistor Tr, current sensing resistor R SENSE by the
low resistance. Wiring to the SENSP pin isn't Tr side, but connect it from R SENSE side. Over current value may become low
when wiring from Tr side. Connect R SENSE of GND side isolated to SENS pin. Don’t wire between R SENSE and SNESN pin wiring
from R SENSE pin to GND pin. And R SENSE GND line must be wired directly to GND pin of output capacitor. It has the
possibility that restricts the current drive performance by the influence of the noise when other GND is connected to this GND.
Connect LED current setting resistor RISET nearest to ISETH pin. There is possibility to oscillate when capacity is added
to ISETH terminal, so pay attention that capacity isn't added. And, RISET of GND side must be wired directly to GND
pin.
When those pins are not connected directly near the chip, influence is given to the performance of BD6583MUV-A, and may
limit the current drive performance. As for the wire to the inductor, make its resistance component small so as to reduce electric
power consumption and increase the entire efficiency.
The layout pattern in consideration of these is shown in next page.
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? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
21/32
TSZ02201-0G3G0C400180-1-2
03.Dec.2012 Rev.001
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